| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which can restrain generation of recesses in the upper part of a wiring layer above a plug. SOLUTION: This manufacturing method of a semiconductor device comprises the processes of (a) forming an impurity diffused layer 34, (b) forming a inter- layer insulating layer 40 with a through-hole 42 on the impurity diffused layer 34, (c) forming a plug 50 inside the through-hole 42, (d) forming a base layer 62 on the plug 50 and the inter-layer insulating layer 40, and (e) forming an aluminum layer 64 on the base layer 62 at a substrate temperature of 250 deg.C or higher under vacuum. |
