| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating the sectional characteristics of the surface layer of such semiconductor as an Si wafer by condestructively measuring them with high resolution and without making contact. SOLUTION: A semiconductor surface layer, surface characteristics, or interface characteristics are measured and evaluated, by selectively having an electron energy irradiated to a semiconductor so that carriers are excited in the surface layer of the semiconductor and detecting the carrier behavior of the surface layer.
|
