| 摘要 |
PROBLEM TO BE SOLVED: To effectively eliminate deposit in a chamber by supplying a mixed gas of a nitrogen gas and an oxygen gas into a chamber for generating plasma and cleaning the inside of the chamber. SOLUTION: In the dry etching device for etching a substrate for photomasks where an MoSi film and a Cr film are successively formed on a crystal glass substrate, a mixed gas of a nitrogen gas and an oxygen gas is supplied into a chamber for generating plasma, and the inside of the chamber is cleaned. Concretely speaking, the MoSi film is subjected to dry etching by a mixed gas of CF4 and O2. After that, the glass crystal substrate that is a dummy substrate is carried in to perform plasma cleaning using a mixed gas of Cl2 and O2. Then, after the dummy substrate is carried in, Cr blanks are carried into the chamber to perform the dry etching of the Cr film with the mixed gas of Cl2 and O2. After the dry etching, the Cr blanks are carried out.
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