| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for condestructively evaluating a carrier distribution in a semiconductor with high spatial resolution of nm level. SOLUTION: A semiconductor-evaluating device applies an infrared ray L1 from the reverse side of the detection surface of a semiconductor 10 by an irradiation means 5, detects a reflected beam L2 by a reflected light detection means 8A, excites surface plasmons by carrier in the semiconductor 10 by the infrared ray L1, where incidence conditions have been set so that the surface plasmons can be excited through the detection result, converts a surface plasmon mode being excited in the semiconductor 10 to a localization mode, when a metal probe 1 being controlled by a control means 3 is brought closer to the detection surface of the semiconductor 10 that is excited by the surface plasmon for scanning, and measures a scattered light L3 that is radiated from the detection surface of the semiconductor 10 using a scattered light detection means 8B.
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