| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of high EM reliability. SOLUTION: This semiconductor device has insulating films 31, 39 and a metallic wiring 37 formed on a semiconductor substrate 30 and an interposed layer 38, formed in at least one region of a surface between an insulating film and a metallic wiring. An interposed layer contains Si and O for a metallic material which constitutes a metallic wiring. |
| 申请公布号 |
JP2000260770(A) |
申请公布日期 |
2000.09.22 |
| 申请号 |
JP19990064595 |
申请日期 |
1999.03.11 |
| 申请人 |
TOSHIBA CORP |
发明人 |
WATABE TADAYOSHI;ITO SACHIYO;USUI TAKAKIMI;KANEKO HISAFUMI;MORITA MASAKO;EZAWA HIROKAZU |
| 分类号 |
H01L21/3205;H01L21/28;H01L21/285;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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