| 摘要 |
PROBLEM TO BE SOLVED: To increase the crystal grain size of a semiconductor thin film with a satisfactory reproducibility only by injection of a laser beam for a method of crystallizing semiconductor thin film and a semiconductor device. SOLUTION: A non-single crystal semiconductor thin film 2 consisting essentially of silicon is formed on an insulating substrate 1, and then an insulating pattern 3 is selectively formed on the film 2. Thereafter, the resulting substrate 1 is irradiated with a laser beam 4, thereby crystallizing the film 2 from the ends toward the central portion of the pattern 3. As a result, such high- performance thin-film semiconductor devices free of variations in characteristics as TETs can be manufactured with a satisfactory productivity and hence contributes to devices such as active matrix liquid crystal display devices, given high image quality and high definition and manufactured at lower cost.
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