EVALUATION OF SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To evaluate whether a secondary defect such as dislocation or the like is generated from an oxygen precipitate within a sufficiently short time as compared with investigation due to a TEM method while enhancing the calculation accuracy of oxygen preciptation quantity in a method utilizing an X-ray topograph method without destructing a CZ-Si wafer. SOLUTION: The correlations between the intensities of diffracted X-rays 5 and oxygen precipitation quantities are preliminarily calculated with respect to a silicon wafer heat-treated at 750 deg.C or higher and a silicon wafer heat- treated at 750 deg.C or lower and the same method is adapted to a heat-treated silicon single crystal to be measured to measure the intensity of diffracted X-rays 5 and the oxygen precipitation quantity of the same wafer 4 is calculated. At this time, two kinds of correlations are individually adapted to enhance the calculation accuracy of oxygen precipitation quantity.