发明名称 MANUFACTURE FOR THIN-FILM THERMOELECTRIC CONVERSION ELEMENT AND THE THIN-FILM THERMOELECTRIC CONVERSION ELEMENT
摘要 PROBLEM TO BE SOLVED: To form a thermoelectric material thin film having a desirable composition ratios by a method, wherein when the thermoelectric material thin film that changes the conductivity type according to a change in composition ratios is formed on a substrate, substrate temperatures are controlled. SOLUTION: Through the use of a thermoelectric material that changes the conductivity type according to a change in the composition ratios, substrate temperatures are controlled, whereby the composition ratio of a thermoelectric material thin film is controlled, thereby forming a desired conductivity type of the thermoelectric material thin film. As a method for controlling the substrate temperatures, the next method is disclosed, namely, in a film former, a heater and cooling means are integrated into a desired pattern in a substrate holder for holding the substrate, or a Peltier element is integrated, disposed, or the like into a desirable pattern, and the temperature distribution is kept on the surface of a substrate holder, whereby the temperature distribution is kept on the substrate, too. Thus, a prescribed temperature distribution is kept on the substrate to form the thermoelectric material, thereby obtaining a p-type or n-type thermoelectric material thin film which maximizes a performance index.
申请公布号 JP2000261052(A) 申请公布日期 2000.09.22
申请号 JP19990058644 申请日期 1999.03.05
申请人 SHARP CORP 发明人 YAMANAKA RYOSUKE;YAMAZAKI ICHIRO;SATOMURA MASAFUMI
分类号 H01L35/16;C23C14/54;H01L35/34;(IPC1-7):H01L35/34 主分类号 H01L35/16
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