| 摘要 |
PROBLEM TO BE SOLVED: To obtain a formation method, in which a contact hole and a wiring groove or a deep contact hole and a shallow contact hole can be formed simultaneously only by one photolithographic process. SOLUTION: This forming method is provided with a process, in which an interlayer insulating film 2 is formed on a semiconductor substrate 1. In addition the method is provided with a process, in which a first insulating film 3 is formed on the interlayer insulating film 2. In addition, the method is provided with a process in which the first insulating film 3 is coated with a resist 4 and in which the diameter of a contact, to be formed region 6 is patterned to be larger than the width of a wiring-groove to be formed region 5 or the diameter of a deep contact-to-be-formed region is patterned to be larger than the diameter of a shallow contact to be formed region. Thereby, a contact hole and a wiring groove or a deep contact hole, and a shallow contact hole can be formed by one photolithographic process.
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