发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To impress a boost voltage to plural word lines at the time of burn-in test without increasing a chip area, to simultaneously perform the burn-in test to a lot of cells in a short time, to shorten time required for the burn-in test and to improve the processing efficiency of the burn-in test in production. SOLUTION: When at least one of redundant word select signals RD0-RDm, redundant word select signals RW0-RWm and test signal T4 is 'H' level, NOR circuits 220-22m output a signal WD0 at 'L' level. An OR circuit 25 is the OR circuit of (m) inputs and when any one of redundant word select signals RD1-RDm becomes 'H' level, a word line selection inhibit signal RDE is outputted at 'H' level, for example, to a row decoder. Even in the case of burn-in test for which the test signal T4 becomes 'H' level, concerning a redundant row selector circuit 2, the word line selection inhibit signal RDE becomes 'L' level, a redundant cell and a normal cell are simultaneously selected and the burn-in test is performed at the same time.
申请公布号 JP2000260199(A) 申请公布日期 2000.09.22
申请号 JP19990057576 申请日期 1999.03.04
申请人 NEC CORP 发明人 HASHIMOTO HIROAKI
分类号 G11C29/04;G11C29/00;G11C29/06;G11C29/50;(IPC1-7):G11C29/00 主分类号 G11C29/04
代理机构 代理人
主权项
地址