| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which can solve the problems (generation of scratches and generating of erosion) caused in metal CMP and problems (increase in the number of processes and in cost, generation of scratches and irregularities in wafers) caused, when oxide film CMP is carried out additionally. SOLUTION: After a second insulating film 3 and a sacrificial film 4 are laminated in the upper layer of a first insulation film 2, wherein a metallic wiring 1 is arranged and a plug hole for conductive connection with a metallic wiring is formed, the sacrificial film 4 is used as an etching stopper of metal CMP, when a metallic film deposited over the entire surface is etched back by using metal CMP and a sacrificial layer, wherein a scratch 8 is generated is removed after metal CMP is finished. Thereby, the second insulating film 3 is prevented from being damaged.
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