发明名称 |
METHOD OF CRYSTAL GROWTH, METHOD OF FORMING FINE SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND SYSTEM |
摘要 |
<p>A method of crystal growth for producing a compound crystal material containing about several percentages nitrogen, such as a compound crystal semiconductor material comprising one or more Group III elements, nitrogen, and one or more Group V elements other than nitrogen, typically GaInNAs, which comprises conducting crystal growth under such conditions that a nitrogen source is utilized at a high efficiency. The method, in which a compound crystal containing nitrogen as a component thereof is formed, is characterized by using ammonia (NH3) as a nitrogen source and adding aluminum. The aluminum accelerates the decomposition/adsorption of the ammonia and thereby improves the efficiency of introduction of nitrogen into the crystal.</p> |
申请公布号 |
WO0055398(A1) |
申请公布日期 |
2000.09.21 |
申请号 |
WO2000JP01688 |
申请日期 |
2000.03.17 |
申请人 |
SHARP KABUSHIKI KAISHA;TAKAHASHI, KOJI;TOMOMURA, YOSHITAKA;KAWANISHI, HIDENORI |
发明人 |
TAKAHASHI, KOJI;TOMOMURA, YOSHITAKA;KAWANISHI, HIDENORI |
分类号 |
C30B23/02;C30B25/02;(IPC1-7):C30B29/40 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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