| 摘要 |
<p>A large DRAM (dynamic random-access memory) uses rather low cell read voltage, and its operation is likely to be unstable. If the memory cell is designed for a gain to amplifying signal voltage, then the memory cell area increases. Therefore, there is a need for a RAM with small-area memory cells capable of stabilized operation. A semiconductor device according to this invention comprises a three-dimensional cell structure that includes MOS transistors (2, 3, 4, 5) for reading information, transistors (8, 11b) for writing information, and a capacitor (11a) for controlling the voltage at storage nodes.</p> |
