发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURE THEREOF, CIRCUIT BOARD, AND ELECTRONIC DEVICE
摘要 <p>A semiconductor device comprises a semiconductor element (10) with a plurality of electrodes (12), a wiring pattern (20) connected electrically with the electrodes (12), a plurality of insulating layers (41, 42, 43), and a plurality of external terminals (30) connected electrically with the wiring pattern (20). The insulating layers (41, 42, 43) each include a plurality of holes (44, 46, 48), which are communicating with one another to form an opening (40). The external terminals (30) are located in the respective openings (40). The second hole (46) formed in the second insulating layer (42) is larger than the first hole (44) formed in the first insulating layer (41) under the second layer.</p>
申请公布号 WO0055898(A1) 申请公布日期 2000.09.21
申请号 WO2000JP01387 申请日期 2000.03.08
申请人 SEIKO EPSON CORPORATION;HANAOKA, TERUNAO;ITO, HARUKI;NOZAWA, KAZUHIKO 发明人 HANAOKA, TERUNAO;ITO, HARUKI;NOZAWA, KAZUHIKO
分类号 H01L21/60;H01L21/768;H01L23/31;H01L23/485;(IPC1-7):H01L21/60 主分类号 H01L21/60
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