发明名称 Photomaske
摘要 A photo mask and method for manufacturing the same increase the capacitance of a capacitor by improving the proximity effect of the mask pattern. The photo mask includes a transparent substrate, an opaque mask pattern (11;15;20) for defining an optical transmission area on the substrate, and an optical transmittance control film pattern (10;14;17&18) for suppressing proximity effect in the optical transmission area. The proximity effect is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the opaque mask pattern, so that the mask pattern shape can be exactly transferred onto a substrate. Thus, capacitor surface area is increased thereby improving the reliability of manufacture of a semiconductor device. <IMAGE>
申请公布号 DE69518345(D1) 申请公布日期 2000.09.21
申请号 DE1995618345 申请日期 1995.01.09
申请人 SAMSUNG ELECTRONICS CO. LTD., SUWON 发明人 HAN, WOO-SUNG;SOHN, CHANG-JIN
分类号 G03F1/68;G03F1/00;G03F1/36;G03F1/80;G03F7/20;G03F7/26;H01L21/027 主分类号 G03F1/68
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