| 摘要 |
<p>A wafer is used for ion current density measurement. The wafer comprises a semiconductor or conductor (1) provided on an insulator (6), an insulator (2) formed on the semiconductor or conductor (1) and having a region which is locally thin, and a second conductor (4) provided on the insulator (2). One of the semiconductor or conductor (1) and the second conductor (4) has a first region at which a substantially total solid angle is formed; the other has a second region at which a solid angle smaller than the solid angle formed at the first region is formed. The wafer is exposed to a plasma, a voltage is applied between the semiconductor or conductor (1) and the second conductor (4), the time until the insulator (2) undergoes dielectric breakdown is measured to find the ion current density from the charge necessary to cause the dielectric breakdown and the area exposed from the surface of the second conductor (4). Thus, the ion current density of ions striking the wafer is measured on the wafer, adapting the method to mass production.</p> |
