| 摘要 |
<p>A method of crystal growth for producing a compound crystal material containing about several percentages nitrogen, such as a compound crystal semiconductor material comprising one or more Group III elements, nitrogen, and one or more Group V elements other than nitrogen, typically GaInNAs, which comprises conducting crystal growth under such conditions that a nitrogen source is utilized at a high efficiency. The method, in which a compound crystal containing nitrogen as a component thereof is formed, is characterized by using ammonia (NH3) as a nitrogen source and adding aluminum. The aluminum accelerates the decomposition/adsorption of the ammonia and thereby improves the efficiency of introduction of nitrogen into the crystal.</p> |
