发明名称 PROJECTION LITHOGRAPHY PHOTOMASK SUBSTRATE AND METHOD OF MAKING
摘要 The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content </= 10 ppm, an F wt. % concentration >/= 0.5 wt. %.
申请公布号 WO0055100(A1) 申请公布日期 2000.09.21
申请号 WO2000US03536 申请日期 2000.02.11
申请人 CORNING INCORPORATED;BERKEY, GEORGE, D.;MOORE, LISA, A.;PIERSON, MICHELLE, D. 发明人 BERKEY, GEORGE, D.;MOORE, LISA, A.;PIERSON, MICHELLE, D.
分类号 C03B8/04;C03B19/14;C03B23/043;C03B23/045;C03B23/047;C03B23/049;C03B23/051;C03B23/07;C03C3/06;C03C3/112;C03C4/00;G03F1/00;H01L21/027 主分类号 C03B8/04
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