发明名称 METHOD FOR PRODUCING A PATTERN SUITABLE FOR FORMING SUB-MICRON WIDTH METAL LINES
摘要 The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0.005 volume percent to about 0.05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0.005 volume percent to about 0.5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.
申请公布号 WO0055691(A1) 申请公布日期 2000.09.21
申请号 WO2000EP01831 申请日期 2000.03.03
申请人 CLARIANT INTERNATIONAL LTD.;CLARIANT FINANCE (BVI) LIMITED 发明人 REDD, RANDY, D.;DAMMEL, RALPH, R.;SAGAN, JOHN, P.;SPAK, MARK, A.
分类号 G03F7/039;G03F7/16;G03F7/26;G03F7/32;G03F7/38;H01L21/027;H01L21/28;H01L21/302;H01L21/3065;H01L21/3205;(IPC1-7):G03F7/32 主分类号 G03F7/039
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