| 摘要 |
<p>An exposure system capable of measuring quickly and accurately an aberration of a projection optical system, wherein a measuring light source (33) for emitting a measuring light (RL) having a power smaller than that of an exposure light (EL) is provided. A pinhole-carrying test reticle is mounted on a reticle stage (RST) and the measuring light is passed through the pinhole to produce a spherical wave in the measuring light (RL). This spherical wave-carrying measuring light is passed through the projection optical system (PL) and received by a wave aberration measuring unit (35) of a Jack-Hartman method disposed on a wafer stage (WST) to determine an aberration (wave aberration) of the projection optical system (PL) at a wave aberration detector (40). Based on the measured wave aberration, image characteristics of the projection optical system (PL) is adjusted.</p> |
