| 发明名称 |
ELECTRON BEAM PROCESS DURING DAMASCENE PROCESSING |
| 摘要 |
<p>A process for the formation of structures in microelectronic devices such as integrated circuit devices. Vias, interconnect metallization and wiring line s are formed using single and dual damascene techniques wherein dielectric layers are treated with a wide electron beam exposure.</p> |
| 申请公布号 |
CA2368265(A1) |
申请公布日期 |
2000.09.21 |
| 申请号 |
CA20002368265 |
申请日期 |
2000.03.16 |
| 申请人 |
ELECTRON VISION CORPORATION |
发明人 |
ROSS, MATTHEW |
| 分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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| 地址 |
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