发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF |
摘要 |
A large DRAM (dynamic random-access memory) uses rather low cell read voltage, and its operation is likely to be unstable. If the memory cell is designed for a gain to amplifying signal voltage, then the memory cell area increases. Therefore, there is a need for a RAM with small-area memory cells capable of stabilized operation. A semiconductor device according to this invention comprises a three-dimensional cell structure that includes MOS transistors (2, 3, 4, 5) for reading information, transistors (8, 11b) for writing information, and a capacitor (11a) for controlling the voltage at storage nodes.
|
申请公布号 |
WO0055906(A1) |
申请公布日期 |
2000.09.21 |
申请号 |
WO2000JP01094 |
申请日期 |
2000.02.25 |
申请人 |
HITACHI, LTD.;NAKAZATO, KAZUO;ITO, KIYOO |
发明人 |
NAKAZATO, KAZUO;ITO, KIYOO |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;G11C11/401 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|