| 摘要 |
A side-wall film of a gate electrode is fabricated as a two-layer structure including an underlying thin silicon nitride film and a relatively thick silicon oxide film. The silicon nitride film covers and protects the edge of the gate oxide film against formation of a gate bird's beak at the edge of the gate oxide film. The side-wall contacts with the silicon substrate substantially at the thick silicon oxide film of the side-wall, which prevents formation of a carrier trap area adjacent to the channel area. The bottom of the side-wall may be a nitride-doped silicon oxide instead. |
