| 发明名称 |
Method for forming a porous silicon oxide film |
| 摘要 |
<p>A method for forming an interlayer insulating film is disclosed. This method comprises the steps of: forming an Si-C film or an Si-C-H film on an underlying insulating film by performing plasma polymerization for an Si and C containing compound; forming a porous SiO2 film by performing O (oxygen) plasma oxidation for the Si-C film or the Si-C-H film; and forming a cover insulating film on the porous SiO2 film by performing H (hydrogen) plasma treatment for the porous SiO2 film. <IMAGE> <IMAGE></p> |
| 申请公布号 |
EP1037275(A1) |
申请公布日期 |
2000.09.20 |
| 申请号 |
EP20000103333 |
申请日期 |
2000.02.21 |
| 申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
MAEDA, KAZUO |
| 分类号 |
H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/762 |
主分类号 |
H01L21/316 |
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