发明名称 |
CADMIUM-MERCURY TELLURIDE SURFACE PASSIVATING TECHNIQUE |
摘要 |
infrared photodetector manufacture. SUBSTANCE: semiconductor surfaces are subjected to chemical treatment and passivating to obtain thick (up to 3000 A) passivating coatings dispensing with additional protection on CdxHg1-x surface within short time. Sulfidizing solution for passivating film is made of following ingredients, mass percent: sulfur - 0,3- 6; sodium or potassium hydroxide (45% aqueous solution) - 94-99.7. EFFECT: improved efficiency of process and quality of passivating film.
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申请公布号 |
RU2156519(C2) |
申请公布日期 |
2000.09.20 |
申请号 |
RU19960113444 |
申请日期 |
1996.06.28 |
申请人 |
GOSUDARSTVENNYJ NAUCHNYJ TSENTR ROSSIJSKOJ FEDERAT;G NTS ROSSIJSKOJ FEDERAT;STVENNOE OB ORION |
发明人 |
KOSAREV A.A. |
分类号 |
H01L21/471;(IPC1-7):H01L21/471 |
主分类号 |
H01L21/471 |
代理机构 |
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代理人 |
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地址 |
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