发明名称 CADMIUM-MERCURY TELLURIDE SURFACE PASSIVATING TECHNIQUE
摘要 infrared photodetector manufacture. SUBSTANCE: semiconductor surfaces are subjected to chemical treatment and passivating to obtain thick (up to 3000 A) passivating coatings dispensing with additional protection on CdxHg1-x surface within short time. Sulfidizing solution for passivating film is made of following ingredients, mass percent: sulfur - 0,3- 6; sodium or potassium hydroxide (45% aqueous solution) - 94-99.7. EFFECT: improved efficiency of process and quality of passivating film.
申请公布号 RU2156519(C2) 申请公布日期 2000.09.20
申请号 RU19960113444 申请日期 1996.06.28
申请人 GOSUDARSTVENNYJ NAUCHNYJ TSENTR ROSSIJSKOJ FEDERAT;G NTS ROSSIJSKOJ FEDERAT;STVENNOE OB ORION 发明人 KOSAREV A.A.
分类号 H01L21/471;(IPC1-7):H01L21/471 主分类号 H01L21/471
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