| 摘要 |
A method of fabricating a compound semiconductor device includes a step of removing a semiconductor layer by an etching process to expose an upper major surface of an underlying semiconductor layer, followed by a growth of another semiconductor layer of the p-type on the surface thus exposed, wherein the exposed surface is cleaned by a flushing of a gaseous metal organic compound containing a group V element for removing impurities therefrom and further doping the exposed surface to the p-type.
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