| 摘要 |
The invention provides a method of fabricating a semiconductor device, including the steps of (a) depositing a titanium film over a silicon substrate, (b) depositing an amorphous silicon film on the titanium film, (c) carrying out first thermal annealing to form a first TiSi2 film over a resultant, (d) carrying out second thermal annealing to cause a single crystal silicon layer to grow in a region in which a source/drain region is to be formed, (e) successively removing the amorphous silicon film and the first TiSi2 film, and (f) forming a highly concentrated diffusion layer in the region, the diffusion layer having conductivity opposite to that of the silicon substrate. In accordance with the method, it is possible to form a salicided MOS transistor which includes a source/drain diffusion layer having shallow junction depth, and low-resistive source/drain regions.
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