发明名称 |
Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof |
摘要 |
The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.
|
申请公布号 |
US6120912(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19980102048 |
申请日期 |
1998.06.22 |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
SAWADA, YOSHIHIRO;HASHIMOTO, AKIRA;OSAKA, TETSUYA;KOIWA, ICHIRO;MITA, JURO;MAENO, YOSHINORI;OKADA, YUKIHISA;KATO, HIROYO |
分类号 |
B05D5/12;C01G29/00;C01G33/00;C01G35/00;C23C16/40;C23C16/448;C23C18/12;H01B3/12;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;(IPC1-7):B32B9/00;B05B3/10;B05D1/36 |
主分类号 |
B05D5/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|