发明名称 |
Method for fabricating a field emission display |
摘要 |
A field emission display and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mold; growing a diamond on the silicon mold, to form a diamond tip; forming a conductive layer on the diamond tip; bonding a first substrate to the conductive layer; removing the silicon mold; forming a gate insulating layer and gate electrode on the diamond tip; and etching the gate electrode and gate insulating layer to expose an electron emission portion of the tip, and thereby form a gate hole. By doing so, the operation voltage is reduced, compared with the diode-type display, and high-responsibility field emission display can be realized by applying (-) or (+) voltage to the gate electrode.
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申请公布号 |
US6121066(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19960648844 |
申请日期 |
1996.05.15 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
JU, BYEONG KWON;OH, MYUNG HWAN;LEE, YUN HI |
分类号 |
H01J9/02;(IPC1-7):H01L21/00 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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