| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive vapor depositing material capable of producing a compounded vapor deposition film by using one electron gun without causing compositional deviation, free from the generation of spitting at the time of vapor deposition and free from fracture even if being applied with electron beams of high energy and to provide a method for forming such a vapor depositing material and a method for forming a composite ceramic thin film having stable performance on a substrate on the side to be vapor-deposited. SOLUTION: This vapor depositing material is a sintered body essentially consisting of aluminum oxide and silicon nitride and contg. the oxides of one or >= two kinds of alkaline-earth metals, in which the α fractional ratio of silicon nitride in the sintered body is <=90%, the sialon producing ratio in the sintered body is <=50%, and the apparent specific gravity is 40 to 70% of the specific gravity obtd. on the assumption that it is composed of aluminum oxide and silicon nitride. |
