| 摘要 |
A radiation shield for protecting an integrated circuit device from harmful radiation has a high Z shielding material for absorbing radiation. The radiation shield has a planar lower surface in contact with an upper surface of the integrated circuit device. The radiation shield also has a central portion in substantial registration with integrated circuit device. The central portion has a thickness sufficient to absorb harmful radiation. A distal portion is located about the central portion. A transitional portion is located between and connects the central and distal portions. The transitional portion has a minimum thickness, as, measured from the integrated circuit, that is about equal to the thickness of the central portion.
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