发明名称 Semiconductor memory
摘要 In addition to a pulse train of a refresh request (RRQ) signal requesting for refresh per memory row, a self-refresh mode (SRMOD) signal is applied to a refresh control circuit. As soon as the SRMOD signal makes a transition from LOW to HIGH, an oscillation circuit starts generating a clock pulse train. In response to this clock pulse train, a set pulse is generated. A flip-flop circuit is set by the set pulse and a leading edge of a periodic refresh request (PRRQ) signal pulse is generated. Every time the PRRQ signal becomes HIGH, a reset pulse is generated, the flip-flop circuit is reset by the reset pulse, and a trailing edge of the PRRQ signal pulse is generated. Such arrangement provides a memory having a novel refresh input specification capable of reducing a burden of logic circuits for controlling access of the memory.
申请公布号 US6122214(A) 申请公布日期 2000.09.19
申请号 US19990273474 申请日期 1999.03.22
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 FUJIMOTO, TOMONORI;OOTA, KIYOTO
分类号 G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C11/406
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