| 发明名称 |
Film structure, electronic device, recording medium, and process of preparing ferroelectric thin films |
| 摘要 |
In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8</=(Pb+Rn)/Ti</=1.3 and 0.5</=Pb/(Pb+Rn)</=0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.
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| 申请公布号 |
US6121647(A) |
申请公布日期 |
2000.09.19 |
| 申请号 |
US19970883456 |
申请日期 |
1997.06.26 |
| 申请人 |
TDK CORPORATION |
发明人 |
YANO, YOSHIHIKO;NOGUCHI, TAKAO |
| 分类号 |
C30B25/18;C23C14/00;C23C14/08;C30B29/22;C30B29/32;G01Q60/38;G01Q80/00;G11B9/00;G11B9/02;H01B3/00;H01L21/314;H01L21/316;H01L29/51;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
C30B25/18 |
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