发明名称 |
CASB buffer circuit of semiconductor memory device |
摘要 |
Disclosed is a buffer circuit of a semiconductor memory device having input means for receiving an input signal externally applied by an external control signal and output means for outputting the input signal of the input means as a writing control signal through an output means, including: switching means connected to the input means, and for switching the signal transmission from the input means to the output means according to first and second internal control signals; a latch means for latching an output signal from the switching means; and a pulse generator for receiving the output signal of the latch means and the external control signal and outputting the first and second internal control signals for controlling the switching means.
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申请公布号 |
US6122202(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19970881954 |
申请日期 |
1997.06.25 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JEONG, CHEOL-WOO |
分类号 |
G11C11/401;G11C8/18;G11C11/407;G11C11/409;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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