发明名称 |
Non-volatile memory device having multi-bit cell structure and a method of programming same |
摘要 |
There is provided a non-volatile memory device having a multi-bit cell structure. In the non-volatile memory device, a memory cell array includes a plurality of cells of a first conductivity type which has different threshold voltages and are arranged in a matrix on a semiconductor substrate. A bulk region of a second conductivity type opposite to the first conductivity underlies the memory cell array and receives a predetermined back bias voltage when a cell is driven. The threshold voltage difference between states can be sufficiently widened because a state having a high bulk concentration is highly susceptible to a body effect. Therefore, reduction of masks leads to process simplicity, reduced turnaround time, and improved process margin.
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申请公布号 |
US6122188(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19980219024 |
申请日期 |
1998.12.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM, EUI-DO;LEE, WOON-KYUNG;CHOI, JEONG-HYOUK |
分类号 |
H01L27/112;G11C11/56;H01L21/8246;(IPC1-7):G11C17/00 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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