Low temperature chemical mechanical polishing of dielectric materials

摘要

The present invention is an improved apparatus and process for chemical mechanical polishing layers which have a low dielectric constant (K). The present invention lowers the temperature of the material having a low dielectric constant and then polishes that material at the lower temperature. By lowering the temperature of the low K material the hardness or stiffness of the material is improved making it easier to polish and resulting in a more planar surface.