| 发明名称 |
Sintered ITO and an ITO sputtering target |
| 摘要 |
Sintered ITO having a relative density of at least 88% and an oxygen content of 15.5-17.0 wt %, as well as an ITO sputtering target made of this sintered ITO. Using the target, an optimal range for the proportion of oxygen in a mixture of argon and oxygen gases used as a sputtering atmosphere is sufficiently expanded to permit the consistent formation of ITO films.
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| 申请公布号 |
US6121178(A) |
申请公布日期 |
2000.09.19 |
| 申请号 |
US19970944095 |
申请日期 |
1997.10.02 |
| 申请人 |
DOWA MINING CO., LTD. |
发明人 |
ESHIMA, KOHICHIRO;TOISHI, KOUKI;OKABE, KATSUAKI;NISHIMURA, TSUYOSHI;SATO, SHINJI;NAGATA, CHOJU |
| 分类号 |
C04B35/64;C01G19/00;C04B35/457;C23C14/08;C23C14/34;C30B29/22;(IPC1-7):C04B35/453 |
主分类号 |
C04B35/64 |
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