发明名称 |
Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitors |
摘要 |
In one aspect of the invention, an amorphous layer of silicon is provided which has a gradient of thickness variation. The amorphous layer of silicon is transformed into a hemispherical grain polysilicon layer that has varying grain size therein. In another aspect of the invention, a material is provided and has an upper surface and inwardly tapered openings. A first electrically conductive electrode layer is formed within the openings and includes a plurality of hemispherical grain polysilicon layers. At least one of the hemispherical grain polysilicon layers has a grain size gradient defined by a smaller grain size in a region proximate the upper surface and a larger grain size beneath the region with the smaller grain size. An electrically insulative layer is formed over the first electrode layer and a second electrically conductive electrode layer is formed over the electrically insulative layer.
|
申请公布号 |
US6121084(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US20000493040 |
申请日期 |
2000.01.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
COURSEY, BELFORD T. |
分类号 |
H01L21/02;H01L21/316;H01L21/318;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|