发明名称 TREATING DEVICE, VACUUM EXHAUST SYSTEM FOR TREATING DEVICE, VACUUM CVD DEVICE, VACUUM EXHAUST SYSTEM FOR VACUUM CVD DEVICE AND TRAPPING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To ensure the stable working of a vacuum pump for exhausting an unreacted gaseous starting material and reaction by-product gas from an evacuating treating chamber, furthermore to efficiently recover reaction by-products, to effectively utilize resources and to reduce the running cost. SOLUTION: This vacuum CVD device is provided with a treating chamber 10 for executing the film formation of copper by a vacuum CVD method, a gaseous starting material feeding part 12 for feeding an organic copper compd. such as Cu (I) hfacTMVS as a gaseous starting material and an evacuating part 14 for evacuating the treating chamber 10. The evacuating part 14 is composed of a vacuum pump 26 and a high temp. trapping device 28 and a low temp. trapping device 30 respectively provided at the front side and rear side. In the high temp. trapping device 28, unreacted Cu (I) hfacTMVS contained in the exhaust gas from the treating chamber 10 is cracked, and metallic copper is trapped, and, in the low temp. trapping device 30, Cu (II) (hfac) 2 as a reaction by-product is trapped.</p>
申请公布号 JP2000256856(A) 申请公布日期 2000.09.19
申请号 JP19990064633 申请日期 1999.03.11
申请人 TOKYO ELECTRON LTD 发明人 YAMAZAKI HIDEAKI;KOUNO YUMIKO;KUBO KENICHI;ARIMA SUSUMU
分类号 B01D53/64;C23C16/18;C23C16/44;C23C16/455;H01L21/285;H01L21/31;H01L21/3205;H01L23/52;(IPC1-7):C23C16/44;H01L21/320 主分类号 B01D53/64
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