发明名称 |
Crystal ion-slicing of single-crystal films |
摘要 |
A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures.
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申请公布号 |
US6120597(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19980025114 |
申请日期 |
1998.02.17 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
LEVY, MIGUEL;OSGOOD, JR., RICHARD M. |
分类号 |
C30B33/08;C30B33/00;H01L21/20;H01L21/265;H01L21/306;H01L21/762;(IPC1-7):C30B31/22 |
主分类号 |
C30B33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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