发明名称 |
Latch-up free power MOS-bipolar transistor |
摘要 |
A MOS bipolar transistor is provide which includes a silicon carbide npn bipolar transistor formed on a bulk single crystal n-type silicon carbide substrate and having an n-type drift layer a p-type base layer. Preferably the base layer is formed by epitaxial growth and formed as a mesa. A silicon carbide nMOSFET is formed adjacent the npn bipolar transistor such that a voltage applied to the gate of the nMOSFET causes the npn bipolar transistor to enter a conductive state. The nMOSFET has a source and a drain formed so as to provide base current to the npn bipolar transistor when the bipolar transistor is in a conductive state. Also included are means for converting electron current flowing between the source and the drain into hole current for injection into the p-type base layer. Means for reducing field crowding associated with an insulating layer of said nMOSFET may also be provided.
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申请公布号 |
US6121633(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19980082554 |
申请日期 |
1998.05.21 |
申请人 |
CREE RESEARCH, INC. |
发明人 |
SINGH, RANBIR;PALMOUR, JOHN W. |
分类号 |
H01L21/331;H01L29/12;H01L29/24;H01L29/73;H01L29/78;(IPC1-7):H01L31/031 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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