| 摘要 |
PROBLEM TO BE SOLVED: To suppress the drop of film forming rate while the coating suitability to the insides of fine halls is improved and to prevent the deterioration in the quality of a thin film to be formed, the characteristics of a device to be produced, or the like. SOLUTION: By giving a prescribed potential to the surface of a substrate 9 to the space potential Vp of plasma P, it is biased, and, while ions in the plasma P are made incident, a thin film is formed. A bias mechanism 6 applies pulselike electrode applying voltage Ve to a bias electrode 23 in a dielectric block 22 and changes the surface potential Vs of the substrate into the pulselike one. The frequency of the pulse is the one equal to or below the oscillation frequency of the ions in the plasma P, the pulse cycle T, pulse width (t) and pulse height (h) are controlled at a control part 62 in such a manner that the incidence of the ions is made optimum. The applied pulse is controlled in such a manner that the surface voltage Vs of the substrate surface is recovered to the floating potential Vf upon the end of the pulse cycle T, and the incidence energy of the ions temporarily exceeds the threshold value of the sputtering of the thin film in the pulse cycle T.
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