发明名称 |
Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer |
摘要 |
In a method for manufacturing a semiconductor device, an impurity diffusion region is formed within a semiconductor substrate. Then, a chemical dry etching process or a heating process is carried out to remove a contamination layer from the impurity diffusion region. Then, a silicon layer is selectively grown on the impurity diffusion region.
|
申请公布号 |
US6121120(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19980130655 |
申请日期 |
1998.08.07 |
申请人 |
NEC CORPORATION |
发明人 |
WAKABAYASHI, HITOSHI;TATSUMI, TORU |
分类号 |
H01L21/20;H01L21/265;H01L21/285;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|