发明名称 |
Method of forming hemispherical grain polysilicon over lower electrode capacitor |
摘要 |
A method of forming a layer of hemispherical grain polysilicon over the lower electrode of a capacitor. The method comprises the steps of providing a substrate that has a field effect transistor already formed thereon, and then forming an insulating layer with a contact opening over the substrate. Subsequently, a polysilicon layer is formed over the insulating layer that completely fills the contact opening. This polysilicon layer is electrically coupled to one of the source/drain regions of the field effect transistor. Thereafter, a thin buffer layer is formed over the polysilicon layer, and then the thin buffer layer is patterned. The thin buffer layer is used as a mask for covering the polysilicon layer that is to be part of the lower electrode of a capacitor. Next, a plasma etching operation is carried out to remove the thin buffer layer and a portion of the polysilicon layer at the same time. Finally, a heat treatment is carried out to form a hemispherical grain polysilicon layer over the surface of the lower electrode.
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申请公布号 |
US6121109(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19980191327 |
申请日期 |
1998.11.13 |
申请人 |
UNITED SEMICONDUCTOR CORP. |
发明人 |
CHEN, SHIH-CHING;SHEN, NENG-HSING |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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