| 摘要 |
PROBLEM TO BE SOLVED: To form a film of a uniform compd. of >= three dimensions having high quality, in an organometallic vapor growth device, by linearly irradiating a wafer with plural gases to form a film in a film forming zone, modifying the passed wafer while being applied with the irradiation by radiant energy in an annealing zone adjacently set in a same container and repeating the film forming stage and the annealing stage. SOLUTION: A film forming zone 1 and an annealing zone 2 are adjacently set horizontally in the same reaction vessel 9 at intervals with a barrier 3, and a wafer 4 reciprocates between the film forming zone 1 and the annealing zone 2, by which film formation and annealing are alternately executed. Organometallic gas is fed from two linear gas irradiating nozzles set in parallel to the film forming zone 1 and is mixed with reaction gas flowed from the annealing zone 2 to form a film. In the annealing zone 2, the wafer 4 is modified by radiant energy from a radiation source 23 for annealing.
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