发明名称 |
Method for forming conductive structures |
摘要 |
Conductive structures and methods for preparing conductive structures are provided. Conductive structures according to the present invention can be prepared by controllably deforming and shaping a metal layer by using a hydrogen gas source and thermally treating the hydrogen gas source.
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申请公布号 |
US6121131(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19990385579 |
申请日期 |
1999.08.31 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ELDRIDGE, JEROME |
分类号 |
H01L21/768;H01L23/522;H01L23/528;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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