发明名称 PRODUCTION OF SPUTTERING TARGET FOR USE AND REUSE IN THIN FILM VAPOR DEPOSITION, AND SPUTTERING VAPOR DEPOSITION TARGET
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a sputtering target and for repairing it so that it can be used and reused in the physical vapor deposition of thin film onto a semiconductor device. SOLUTION: A target base shell (12, 22) is coated by a thermal spraying technique with a source material (14, 24) to be vapor-deposited as thin film. When the source material (14, 24) is eroded during the process of physical vapor deposition, the target (10, 20) can be repaired by applying coating again. This method can be used for both the conventional sputtering target (29) and the newly-developed hollow cathode magnetron sputtering target (10).
申请公布号 JP2000256843(A) 申请公布日期 2000.09.19
申请号 JP20000056209 申请日期 2000.03.01
申请人 PRAXAIR ST TECHNOL INC 发明人 LAM RAYMOND K F;TONY SHIKA;CHII-FAN ROO
分类号 C23C14/34;C23C4/12;C23C16/513 主分类号 C23C14/34
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