Method for forming a porous silicon dioxide film

摘要

A method for forming an interlayer insulating film is disclosed. This method comprises the steps of: forming an underlying insulating film (105) on an object (104) to be formed; and forming a porous SiO2 film (106) on said underlying insulating film (105) by a Chemical Vapor Deposition that employs a source gas containing TEOS (tetraethoxy silane) and O3 where the O3 is contained in the source gas with first concentration that is lower than concentration necessary for oxidizing the TEOS. Alternative method for forming an interlayer insulating film is also disclosed. This method comprises the step of: forming an underlying insulating film (305) on an object (304) to be formed; performing Cl (chlorine) plasma treatment for the underlying insulating film (305); and forming a porous SiO2 film (306) on the underlying insulating film (305) by a Chemical Vapor Deposition that employs a source gas containing TEOS (tetraethoxy silane) and O3.