| 摘要 |
PROBLEM TO BE SOLVED: To form a good-quality thin film on a substrate at a high speed by releasing thermions from a thermion assist device near to a target to excite reactive gas and causing the reaction of the ionized gas and sputter particles. SOLUTION: The gaseous Ar is introduced from an introducing hole into the thermion assist device 4 and a power source is connected thereto to generate plasma within a hollow cathode. The positive ions in the plasma bombard the inside of the hollow cathode and raise the internal temperature to about 2000 to 2100 deg.C to cause the release of the thermion. The thermion are introduced by a through-hole 3a into a vacuum chamber. The reactive gas is introduced from an introducing pipe 2a and sputtering is executed by imparting electric power to the target 2. Simultaneously, the thermion is introduced, by which the reactive gas is ionized and reacts with the sputter particles of Ti, or the like, to manufacture TiO2. A TiO2 film is thus deposited on the substrate 1. The impedance of the sputtering is made lower than the case of the sputtering alone and the deposition speed may be increased.
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