发明名称 |
Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer |
摘要 |
The present invention relates generally to an improved apparatus and process to provide a thin self-aligning layer prior to forming a conducting film layer thereover to improve the film characteristics and deposition coverage. In one aspect of the invention, a dielectric layer is formed over a conducting or semiconducting layer and etched to form an aperture exposing the underlying conducting or semiconducting layer on the aperture floor. An ultra-thin nucleation layer is then deposited by either vapor deposition or chemical vapor deposition onto the field of the dielectric layer. A CVD metal layer is then deposited onto the structure to achieve selective deposition on the floor of the aperture, while preferably also forming a highly oriented blanket layer on the field. In another aspect of the invention, a thin, self-aligning layer is formed over a barrier layer prior to deposition of a conducting film thereover. It is believed that the self-aligning layer enhances the reflectivity of the films by improving the crystal structure in the resulting film and provides improved electromigration performance by providing <111> crystal orientation. The process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the process occurs without the formation of oxides between the layers.
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申请公布号 |
US6120844(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19960622941 |
申请日期 |
1996.03.27 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHEN, LIANG;GUO, TED;CHEN, FUSEN;MOSELY, RODERICK C. |
分类号 |
H01L21/28;C23C14/56;C23C16/54;H01L21/02;H01L21/203;H01L21/285;H01L21/3205;H01L21/677;H01L21/768;(IPC1-7):C23C14/34;C23C16/06;C23C16/22 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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